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Papers tagged with "2deg"
Vol 8, Issue 6 (June 2022)
Electronics And Communication Engineering
OPEN DUAL GATE ALGAN/GAN HETEROSTRUCTURE HEMT
A Novel Aluminium Gallium Nitride/Gallium Nitride Heterostructure High Electron Mobility Transistor Based On Open-dual Gate Technology Was Analysed. To Increase The Threshold Voltage Of GaN High Electron Mobility Transistor, A P-GaN/AlGaN/G...
Dr. T.Venish kumar, S.Jawahar Ramkumar, M.Selvapandi, E.Suriya
Vol 5, Issue 2 (February 2019)
Electronics
A NOVEL APPROACH FOR PROCESS MODELING OF GAN BASED MOS DEVICE
GaN Materials Are Increasingly Becoming Popular As A Replacement To The Si Based Devices. Due To Their Wide Band Gap They Have A Huge Potential For High Power And High Frequency Applications In The Field Of Military, Satellite, Led’s, Laser...
Saumya Paliwal, Shivani Saxena