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Papers tagged with "Mos Hemt Device"
Vol 5, Issue 2 (February 2019)
Electronics
A NOVEL APPROACH FOR PROCESS MODELING OF GAN BASED MOS DEVICE
GaN Materials Are Increasingly Becoming Popular As A Replacement To The Si Based Devices. Due To Their Wide Band Gap They Have A Huge Potential For High Power And High Frequency Applications In The Field Of Military, Satellite, Led’s, Laser...
Saumya Paliwal, Shivani Saxena