Volume 8, Issue 6 (June 2022)

Open Dual Gate Algan/gan Heterostructure Hemt

Impact Factor
7.883
Call For Paper
Volume 12 Issue 10

October 2026

Download Paper Format
Paper Format
Copyright Form
Copy Right Format
Under License Of
IJSART License
Creative Commons Attribution-NonCommercial
4.0 International License
Share on:

Author(s)

Dr. T.Venish kumar S.Jawahar Ramkumar M.Selvapandi E.Suriya

Abstract

A Novel Aluminium Gallium Nitride/Gallium Nitride Heterostructure High Electron Mobility Transistor Based On Open-dual Gate Technology Was Analysed. To Increase The Threshold Voltage Of GaN High Electron Mobility Transistor, A P-GaN/AlGaN/GaN/AlGaN Double

Keywords

GaN/AlGaN Dual Channel HEMT 2DEG P-GaN Silvaco TCAD Characteristics.

Paper ID

IJSARTV8I655326

Publication Date

June 19, 2022

Research Area

Electronics And Communication Engineering

Document Preview

Download Full Article

Submit Your Paper to IJSART

Join the global research community with IJSART. Submit your paper, share your work, and gain worldwide recognition!

Submit Your Paper