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Volume 12 Issue 08
August 2026
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Author(s)
Dr. T.Venish kumar S.Jawahar Ramkumar M.Selvapandi E.Suriya
Abstract
A Novel Aluminium Gallium Nitride/Gallium Nitride Heterostructure High Electron Mobility Transistor Based On Open-dual Gate Technology Was Analysed. To Increase The Threshold Voltage Of GaN High Electron Mobility Transistor, A P-GaN/AlGaN/GaN/AlGaN Double
Keywords
GaN/AlGaN
Dual Channel
HEMT
2DEG
P-GaN
Silvaco TCAD
Characteristics.
Paper ID
IJSARTV8I655326
Publication Date
June 19, 2022
Research Area
Electronics And Communication Engineering