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ISSN: 2395-1052 • IF: 7.883

ISSN: 2395-1052 | Impact Factor:IF: 7.883 | International Peer-Reviewed Open Access Journal

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Si3n4

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7.883

Si3n4

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Papers tagged with "Si3n4"

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Vol 6, Issue 12 (December 2020) Physical Sciences

AN IMPACT OF GATE DIELECTRIC MATERIAL ON MOS DEVICES

Metal Oxide Field Effect Transistor (MOS) Consists A, Controlling Input, Called ‘Gate Electrode’, It Is Often Called "gate Metal" Or "gate Conductor", Which Controls The Threshold Voltage Of The Device. The Underlying Material Of This Gate...

MOSFET Gate Dielectric SiO2 Si3N4 Al2O3 And Ta2O5.

Akanksha Arya, Abhishikta Ghosh Roy, Suchismita Das, Shivani Saxena

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