ELECTRO-DEPOSITED POLYCRYSTALLINE GALLIUM ANTIMONIDE FILMS WITH STOICHIOMETRIC COMPOSITION

Growth of polycrystalline GaSb thin films by electro-deposition technique with stoichiometric composition is presented in this study. Effect of rapid thermal annealing on the grain size and texture of the resultant films were examined. The films annealed at ~ 673 K, ~ 773 K and ~873 K showed predominantly cubic structure. Band gap values varied between 0.59-0.72 eV for films annealed at different temperatures. X-ray photoelectron spectroscopy (XPS) studies indicated peaks related to Ga and Sb only. Ga–Sb bond was located at ~1117.4 eV. Raman studies indicated peaks located at ~225 cm-1 and ~236 cm-1 representing the LO and TO mode of GaSb, respectively.