VARIATION STUDY OF THE MOSFET: A COMPARISON OF ITS TYPES

• Author(s):

  Mussaratjahan Korpali | Basavaraj Mundas | Siddalingesh Bhagavati

• Keywords:

  Symbols, N Channel Enhancement Type MOSFETs, P Channel Enhancement Type MOSFETs, N Channel Depletion Type MOSFETs, P Channel Depletion Type MOSFETs

• Abstract:

  Display Work Is The Relative Survey On The Introduction Of Twofold Entryway (DG) Metal Oxide Semiconductor Field Affect Semiconductor (MOSFET) With Different Channel And Entryway Planning. Five Developments Are Broke Down By Keeping Reliable Channel Lengt

---

Other Details

• Paper id:

  IJSARTV8I351171

• Published in:

  Volume: 8 Issue: 3 March 2022

• Publication Date:

  2022-03-04

Download Article