Low Power Carbon Nano Tube Transistor Based 8t Full Adder Using Mtcmos Technique

• Author(s):

  Neelam jain | Megha chitranshi

• Keywords:

  MTCMOS, Carbon Nano Tube, H-SPICE, Leakage Current, Leakage Power Etc.

• Abstract:

  In This Article A Low Power Carbon Nano Tube Transistor Based Novel 10T Full Adder Cell Is Designed. This Design Is Simulated In 32nm Technology Node Using H-SPICE Simulator. In This Article Multi Threshold Technique Is Used, By Which Leakage Power And Le

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Other Details

• Paper id:

  IJSARTV3I412979

• Published in:

  Volume: 3 Issue: 4 April 2017

• Publication Date:

  2017-04-21

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