DESIGN OF 6T SRAM CELL AND RESULT ANALYSIS

• Author(s):

  Ms. Sonali R. Handge | Prof. Rupali S. Khule

• Keywords:

  6T SRAM Cell, Power Dissipation, Read Delay, Write Delay.

• Abstract:

  Static Random Access Memory (SRAM) Is A Matrix Of Static Volatile Memory Cell. SRAM Has Become A Major Component In Many VLSI Chips Due To Their Large Storage Density And Small Access Time. SRAM Has Become Topic Of Substantial Research Due To The Rapid De

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Other Details

• Paper id:

  IJSARTV3I1218240

• Published in:

  Volume: 3 Issue: 12 December 2017

• Publication Date:

  2017-12-12

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