AN IMPACT OF GATE DIELECTRIC MATERIAL ON MOS DEVICES

• Author(s):

  Akanksha Arya | Abhishikta Ghosh Roy | Suchismita Das | Shivani Saxena

• Keywords:

  MOSFET, Gate Dielectric,SiO2, Si3N4, Al2O3 And Ta2O5.

• Abstract:

  Metal Oxide Field Effect Transistor (MOS) Consists A, Controlling Input, Called ‘Gate Electrode’, It Is Often Called "gate Metal" Or "gate Conductor", Which Controls The Threshold Voltage Of The Device. The Underlying Material Of This Gate Terminal Is A

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Other Details

• Paper id:

  IJSARTV6I1241802

• Published in:

  Volume: 6 Issue: 12 December 2020

• Publication Date:

  2020-12-28

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