A REVIEW ON DESIGN OF PVT INSENSITIVE LOW POWER SRAM CELL

• Author(s):

  Prof. Rupali S. Khule | Sonali R.Handge

• Keywords:

  Leakage Current, Low Power, SRAM, Stability, Static Noise Margin (SNM), Schmitt Trigger.

• Abstract:

  Static Random Access Memory (SRAM) Is A Matrix Of Static Volatile Memory Cell. 6T SRAM Suffers From Read Current Disturbance, 8T SRAM Has Leakage In Read Path, 9T SRAM Increases Read Access Time. 10T Differential Schmitt Trigger SRAM Cell Suffered From Re

---

Other Details

• Paper id:

  IJSARTV3I715994

• Published in:

  Volume: 3 Issue: 7 July 2017

• Publication Date:

  2017-07-13

Download Article