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Volume 10 Issue 12 December 2024


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A NOVEL APPROACH FOR PROCESS MODELING OF GAN BASED MOS DEVICE

  • Author(s):

    Saumya Paliwal | Shivani Saxena

  • Keywords:

    Gallium Nitride, MOS HEMT Device, Wideband Gap, 2DEG.

  • Abstract:

    GaN Materials Are Increasingly Becoming Popular As A Replacement To The Si Based Devices. Due To Their Wide Band Gap They Have A Huge Potential For High Power And High Frequency Applications In The Field Of Military, Satellite, Led’s, Lasers, Medicine And

Other Details

  • Paper id:

    IJSARTV5I229387

  • Published in:

    Volume: 5 Issue: 2 February 2019

  • Publication Date:

    2019-02-17


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