A Novel Approach For Process Modeling Of Gan Based Mos Device

• Author(s):

  Saumya Paliwal | Shivani Saxena

• Keywords:

  Gallium Nitride, MOS HEMT Device, Wideband Gap, 2DEG.

• Abstract:

  GaN Materials Are Increasingly Becoming Popular As A Replacement To The Si Based Devices. Due To Their Wide Band Gap They Have A Huge Potential For High Power And High Frequency Applications In The Field Of Military, Satellite, Led’s, Lasers, Medicine And

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Other Details

• Paper id:

  IJSARTV5I229387

• Published in:

  Volume: 5 Issue: 2 February 2019

• Publication Date:

  2019-02-17

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