A 30 DB GAIN, BETTER S-PARAMETER LOW NOISE AMPLIFIER USING 65NM TECHNOLOGY

• Author(s):

  Durgesh Kumar Soni | Mrs. S. Madhavi Bhanwar

• Keywords:

  LNA, Gain, Body Biased, 5G, Substrate, Inductor.

• Abstract:

  This Paper Show’s The Low Noise Amplifier Having Gain Of 30 DB , S11 Of -25 DB And S22 Of -22 DB. The LNA Designed Is Of Two Stage, Both Are Body Biased I.e. 0.3V Is Applied At The Substrate Of NMOS Transistor. A Inductor Is Also Added In The First Stage

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Other Details

• Paper id:

  IJSARTV6I436304

• Published in:

  Volume: 6 Issue: 4 April 2020

• Publication Date:

  2020-04-08

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