DESIGN OF 6T SRAM CELL AND RESULT ANALYSIS |
Author(s): |
Ms. Sonali R. Handge |
Keywords: |
6T SRAM cell, Power dissipation, Read delay, Write delay. |
Abstract |
Static Random Access memory (SRAM) is a matrix of static volatile memory cell. SRAM has become a major component in many VLSI chips due to their large storage density and small access time. SRAM has become topic of substantial research due to the rapid development for low power, low voltage memory design during recent years due to increase demand for notebooks, laptops, IC memory card and hand held communication devices. SRAMs are widely used for mobile applications as both on chip and off-chip memories, because of their ease of use and low standby leakage. |
Other Details |
Paper ID: IJSARTV Published in: Volume : 3, Issue : 12 Publication Date: 12/12/2017 |
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