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Volume 10 Issue 12 December 2024


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STUDIES ON THE PERFORMANCE OF GAAS PIN PHOTOVOLTAIC CELL WITH DEPLETED INTRINSIC LAYER AND NO DEFECT DENSITY

  • Author(s):

    Debashish Pal

  • Keywords:

    Absorption Coefficient, AM1.5 Spectrum, Compound Semiconductor, Homojunction, Quantum Efficiency

  • Abstract:

    The Performance Of A P-i-n Solar Cell Is Compared To That Of A Reference P-n Junction Solar Cell. For Increased Generation Of Charge Carriers, The Layer At The Top Should Be Very Thin. For Improved Collection Probability The Excitons Are To Be Generated I

Other Details

  • Paper id:

    IJSARTV4I422603

  • Published in:

    Volume: 4 Issue: 4 April 2018

  • Publication Date:

    2018-04-12


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