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STUDIES ON THE PERFORMANCE OF GAAS PIN PHOTOVOLTAIC CELL WITH DEPLETED INTRINSIC LAYER AND NO DEFECT DENSITY
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Author(s):
Debashish Pal
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Keywords:
Absorption Coefficient, AM1.5 Spectrum, Compound Semiconductor, Homojunction, Quantum Efficiency
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Abstract:
The Performance Of A P-i-n Solar Cell Is Compared To That Of A Reference P-n Junction Solar Cell. For Increased Generation Of Charge Carriers, The Layer At The Top Should Be Very Thin. For Improved Collection Probability The Excitons Are To Be Generated I
Other Details
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Paper id:
IJSARTV4I422603
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Published in:
Volume: 4 Issue: 4 April 2018
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Publication Date:
2018-04-12
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