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Volume 10 Issue 12 December 2024
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STRUCTURAL ANALYSIS AND ACTIVATION ENERGY OF TIN DISULPHIDE THIN FILM
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Author(s):
K. Vijayakumar | G.Anbazhagan | J.Vijayarajasekaran | L.Amalraj
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Keywords:
Thin Film; Band Gap; Activation Energy;hexagonal; Crystallite;
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Abstract:
Tin Disulphide (SnS2) In Thin Film Form Was Deposited On Glass Substrate By Chemical Spray Pyrolysis Technique Using The Precursor Solutions Of SnCl2.2H2O And N-n Dimethyl Thiourea At The Molar Concentration 0.3 M At The Substrate Temperature 473 K. Using
Other Details
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Paper id:
IJSARTV3I515428
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Published in:
Volume: 3 Issue: 5 May 2017
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Publication Date:
2017-05-30
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