Structural Analysis And Activation Energy Of Tin Disulphide Thin Film

• Author(s):

  K. Vijayakumar | G.Anbazhagan | J.Vijayarajasekaran | L.Amalraj

• Keywords:

  Thin Film; Band Gap; Activation Energy;hexagonal; Crystallite;

• Abstract:

  Tin Disulphide (SnS2) In Thin Film Form Was Deposited On Glass Substrate By Chemical Spray Pyrolysis Technique Using The Precursor Solutions Of SnCl2.2H2O And N-n Dimethyl Thiourea At The Molar Concentration 0.3 M At The Substrate Temperature 473 K. Using

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Other Details

• Paper id:

  IJSARTV3I515428

• Published in:

  Volume: 3 Issue: 5 May 2017

• Publication Date:

  2017-05-30

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