OPEN DUAL GATE ALGAN/GAN HETEROSTRUCTURE HEMT

• Author(s):

  Dr. T.Venish kumar | S.Jawahar Ramkumar | M.Selvapandi | E.Suriya

• Keywords:

  GaN/AlGaN, Dual Channel, HEMT, 2DEG, P-GaN, Silvaco TCAD, Characteristics.

• Abstract:

  A Novel Aluminium Gallium Nitride/Gallium Nitride Heterostructure High Electron Mobility Transistor Based On Open-dual Gate Technology Was Analysed. To Increase The Threshold Voltage Of GaN High Electron Mobility Transistor, A P-GaN/AlGaN/GaN/AlGaN Double

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Other Details

• Paper id:

  IJSARTV8I655326

• Published in:

  Volume: 8 Issue: 6 June 2022

• Publication Date:

  2022-06-19

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