MODELED THE FRONT END PROCESS FOR FABRICATION OF GAN BASED LASER DIODE

• Author(s):

  Shaloo Gupta | Shivani Saxena

• Keywords:

  Gallium Nitride, Blue Laser Diode (LDs), Wide Band Gap, ELOG, LD Characteristics, Dev-edit..

• Abstract:

  In This Paper, We Have Presented The Modeling And Simulation Of GaN Based LASER Diodes (LDs). Here The Complete Structure Of MQW (InGaN) Blue LD Is Grown On Epitaxial Laterally Overgrown GaN (ELOG) And Sapphire Substrate. ELOG Is Used To Improve The Lifet

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Other Details

• Paper id:

  IJSARTV5I129294

• Published in:

  Volume: 5 Issue: 1 January 2019

• Publication Date:

  2019-01-28

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