VARIATION STUDY OF THE MOSFET: A COMPARISON OF ITS TYPES

Display work is the relative survey on the introduction of Twofold Entryway (DG) Metal Oxide Semiconductor Field Affect Semiconductor (MOSFET) with different channel and entryway planning. Five developments are broke down by keeping reliable channel length. The brief channel boundaries like Sub edge Swing (SS), Trans-conductance (g m ), Electric Field, Surface Potential, All out Stream Thickness, Result Conductance (g d ) and trademark twists are stud-ied and looked at between Totally Doped DG MOSFET (FD-DGMOSFET), Un-Doped DG MOSFET (UD-DG-MOSFET), Looked into Channel DG MOSFET (GC-DG-MOSFET), Twofold Encasing DG MOSFET (DI-DG-MOSFET) and Entryway Stack DG MOSFET (GS-DG-MOSFET).